Schottky Barrier Diode Characteristics
This example shows generation of the current versus voltage curve for a Schottky barrier diode. Define the vector of temperatures for which to plot the characteristics by double clicking on the block labeled 'Define Temperatures for Tests'. Run the tests and plot the I-V curves by clicking in the model on the hyperlink 'plot curves'.
The datasheet for this device gives Vf = 0.4V when If = 10mA, and Vf = 0.65V when If = 100mA. The ohmic resistance is set to one over the gradient of the datasheet I-V curve at higher voltages. The temperature dependence is then modeled by selecting the default energy gap and saturation current temperature exponent values for a Schottky barrier diode.
The plot produced by this test model can be used to validate the implementation against the datasheet I-V plots.
Model
Simulation Results from Simscape Logging
The plot below shows the I-V characteristic for a Schottkey barrier diode extracted from simulation results. The model is simulated once for each specified temperature.
Results from Real-Time Simulation
This example has been tested on these platforms:
Speedgoat™ Performance real-time target machine with an Intel® 3.5 GHz i7 multi-core CPU and 4 GB RAM.
dSPACE® SCALEXIO LabBox with Intel® Core XEON E3-1275v3 at 3.5GHz and 4 GB RAM.
You can run this model in real time with a step size of 10 microseconds by using the Simscape local solver. For small sample rates, a task overrun might occur during the initial task execution due to a cold cache. To avoid this overrun, if the selected platform supports these options, relax the start-up behavior by specifying a limited number of task overruns or increasing the sample time of periodic tasks during the start-up phase of the real-time application.
