N-Channel IGBT
N-Channel insulated gate bipolar transistor
Description
The N-Channel IGBT block models an Insulated Gate
Bipolar Transistor (IGBT). The block provides two main modeling variants, accessible by
right-clicking the block in your block diagram and then selecting the appropriate option
from the context menu, under > :
— This variant is a detailed component model suitable for simulating
detailed switching characteristics and predicting component losses. This
variant, in turn, provides two ways of modeling an IGBT:
The gate junction capacitance in the detailed model is represented as a
fixed gate-emitter capacitance CGE
and either a fixed or a nonlinear gate-collector capacitance
CGC. For details, see Charge Model.
— This variant models the IGBT more simply
by using just the on-state I-V data as a function of the collector-emitter
voltage. In the off state (gate-emitter voltage less than
Threshold voltage, Vth), the IGBT is modeled by a
constant Off-state conductance. This simplified model
is suitable when approximate dynamic characteristics are sufficient, and
simulation speed is of paramount importance. For details, see Event-Based IGBT Variant.
Together with the thermal port variants (see Thermal Port), the block therefore provides you with four choices. To
select the desired variant, right-click the block in your model. From the context menu,
select > , and then one of the following options:
— Detailed model that does not simulate the
effects of generated heat and device temperature. This is the default.
— Detailed model with exposed thermal port.
— Simplified event-based model, which also
does not simulate the effects of generated heat and device temperature.
— Simplified event-based model with
exposed thermal port.
Representation by Equivalent Circuit
The equivalent circuit of the detailed block variant consists of a PNP Bipolar
Transistor block driven by an N-Channel MOSFET block, as shown in the following
figure:
The MOSFET source is connected to the bipolar transistor collector, and the MOSFET
drain is connected to the bipolar transistor base. The MOSFET uses the
threshold-based equations shown in the N-Channel MOSFET block reference page. The bipolar transistor uses the
equations shown in the PNP Bipolar Transistor block reference
page, but with the addition of an emission coefficient parameter
N that scales kT/q.
The N-Channel IGBT block uses the on and off characteristics you
specify in the block dialog box to estimate the parameter values for the underlying
N-Channel MOSFET and PNP bipolar transistor.
The block uses the off characteristics to calculate the base-emitter voltage,
Vbe, and the saturation current,
IS.
When the transistor is off, the gate-emitter voltage is zero and the IGBT
base-collector voltage is large, so the PNP base and collector current equations
simplify to:
where N is the Emission coefficient, N
parameter value, VAF is the forward Early
voltage, and Ic and
Ib are defined as positive flowing
into the collector and base, respectively. See the PNP Bipolar Transistor reference page for definitions of the remaining
variables. The first equation can be solved for
Vbe.
The base current is zero in the off-condition, and hence
Ic =
–Ices, where
Ices is the Zero gate voltage
collector current. The base-collector voltage,
Vbc, is given by
Vbc =
Vces +
Vces, where
Vces is the voltage at which
Ices is measured. Hence we can
rewrite the second equation as follows:
The block sets βR and
βF to typical values of 1 and 50,
so these two equations can be used to solve for
Vbe and
IS:
Note
The block does not require an exact value for
βF because it can adjust the
MOSFET gain K to ensure the overall device gain is
correct.
The block parameters Collector-emitter saturation voltage,
Vce(sat) and Collector current at which Vce(sat) is
defined are used to determine
Vbe(sat) by solving the following
equation:
Given this value, the block calculates the MOSFET gain, K,
using the following equation:
where Vth is the Gate-emitter
threshold voltage, Vge(th) parameter value and
VGE(sat) is the
Gate-emitter voltage at which Vce(sat) is defined parameter
value.
Vds is related to the transistor
voltages as Vds =
Vce –
Vbe. The block substitutes this
relationship for Vds, sets the
base-emitter voltage and base current to their saturated values, and rearranges the
MOSFET equation to give
where Vce(sat) is the
Collector-emitter saturation voltage, Vce(sat) parameter
value.
These calculations ensure the zero gate voltage collector current and
collector-emitter saturation voltage are exactly met at these two specified
conditions. However, the current-voltage plots are very sensitive to the emission
coefficient N and the precise value of
Vth. If the manufacturer datasheet
gives current-voltage plots for different
VGE values, then the
N and Vth can be
tuned by hand to improve the match.
Representation by 2-D Lookup Table
For the lookup table representation of the detailed block variant, you provide
tabulated values for collector current as a function of gate-emitter voltage and
collector-emitter voltage. The main advantage of using this option is simulation
speed. It also lets you parameterize the device from either measured data or from
data obtained from another simulation environment. To generate your own data from
the equivalent circuit representation, you can use a test harness, such as shown in
the IGBT Characteristics example.
The lookup table representation combines all of the equivalent circuit components
(PNP transistor, N-channel MOSFET, collector resistor and emitter resistor) into one
equivalent lookup table.
Representation by 3-D Lookup Table
For the temperature-dependent lookup table representation of the detailed block
variant, you provide tabulated values for collector current as a function of
gate-emitter voltage, collector-emitter voltage, and temperature.
The lookup table representation combines all of the equivalent circuit components
(PNP transistor, N-channel MOSFET, collector resistor and emitter resistor) into one
equivalent lookup table.
If the block thermal port is not exposed, then the Device simulation
temperature parameter on the Temperature
Dependence tab lets you specify the simulation temperature.
Charge Model
The detailed variant of the block models junction capacitances either by fixed
capacitance values, or by tabulated values as a function of the collector-emitter
voltage. In either case, you can either directly specify the gate-emitter and
gate-collector junction capacitance values, or let the block derive them from the
input and reverse transfer capacitance values. Therefore, the
Parameterization options for charge model on the
Junction Capacitance tab are:
Specify fixed input, reverse transfer and output
capacitance
— Provide fixed parameter values from
datasheet and let the block convert the input and reverse transfer
capacitance values to junction capacitance values, as described below. This
is the default method.
Specify fixed gate-emitter, gate-collector and
collector-emitter capacitance
— Provide fixed
values for junction capacitance parameters directly.
Specify tabulated input, reverse transfer and output
capacitance
— Provide tabulated capacitance and
collector-emitter voltage values based on datasheet plots. The block
converts the input and reverse transfer capacitance values to junction
capacitance values, as described below.
Specify tabulated gate-emitter, gate-collector and
collector-emitter capacitance
— Provide tabulated
values for junction capacitances and collector-emitter voltage.
Use one of the tabulated capacitance options (Specify tabulated
input, reverse transfer and output capacitance
or
Specify tabulated gate-emitter, gate-collector and
collector-emitter capacitance
) when the datasheet provides a plot
of junction capacitances as a function of collector-emitter voltage. Using tabulated
capacitance values will give more accurate dynamic characteristics, and avoids the
need to iteratively tune parameters to fit the dynamics.
If you use the Specify fixed gate-emitter, gate-collector and
collector-emitter capacitance
or Specify tabulated
gate-emitter, gate-collector and collector-emitter capacitance
option, the Junction Capacitance tab lets you specify the
Gate-emitter junction capacitance, Gate-collector
junction capacitance, and Collector-emitter junction
capacitance parameter values (fixed or tabulated) directly.
Otherwise, the block derives them from the Input capacitance,
Cies, Reverse transfer capacitance, Cres, and
Output capacitance, Coes parameter values. These two
parameterization methods are related as follows:
CGC =
Cres
CGE = Cies –
Cres
CCE = Coes –
Cres
The two fixed capacitance options (Specify fixed input, reverse
transfer and output capacitance
or Specify fixed
gate-emitter, gate-collector and collector-emitter capacitance
)
let you model gate junction capacitance as a fixed gate-emitter capacitance
CGE and either a fixed or a nonlinear
gate-collector capacitance CGC. If you
select the Gate-collector charge function is nonlinear
option for the Charge-voltage linearity parameter, then the
gate-collector charge relationship is defined by the piecewise-linear function shown
in the following figure.
With this nonlinear capacitance, the gate-emitter and collector-emitter voltage
profiles take the form shown in the next figure, where the collector-emitter voltage
fall has two regions (labeled 2 and 3) and the gate-emitter voltage has two
time-constants (before and after the threshold voltage
Vth):
You can determine the capacitor values for Cies,
Cres, and Cox as
follows, assuming that the IGBT gate is driven through an external resistance
RG:
Set Cies to get correct time-constant for
VGE in Region 1. The time
constant is defined by the product of Cies and
RG. Alternatively, you can use
a datasheet value for Cies.
Set Cres so as to achieve the correct
VCE gradient in Region 2.
The gradient is given by (VGE –
Vth)/(Cres
· RG).
Set VCox to the voltage at which
the VCE gradient changes minus the
threshold voltage Vth.
Set Cox to get correct Miller
length and time constant in Region 4.
Because the underlying model is a simplification of an actual charge distribution,
some iteration of these four steps may be required to get a best overall fit to
measured data. The collector current tail when the IGBT is turned off is determined
by the Total forward transit time parameter.
Note
Because this block implementation includes a charge model, you must model the
impedance of the circuit driving the gate to obtain representative turn-on and
turn-off dynamics. Therefore, if you are simplifying the gate drive circuit by
representing it as a controlled voltage source, you must include a suitable
series resistor between the voltage source and the gate.
Fine-Tuning the Current-Voltage Characteristics
For the equivalent circuit representation of the detailed model, use the
parameters on the Advanced tab to fine-tune the current-voltage
characteristics of the modeled device. To use these additional parameters
effectively, you will need a manufacturer datasheet that provides plots of the
collector current versus collector-emitter voltage for different values of
gate-emitter voltage. The parameters on the Advanced tab have
the following effects:
The Emission coefficient, N parameter controls the
shape of the current-voltage curves around the origin.
The Collector resistance, RC and Emitter
resistance, RE parameters affect the slope of the
current-voltage curve at higher currents, and when fully turned on by a high
gate-emitter voltage.
The Forward Early voltage, VAF parameter affects the
shape of the current-voltage curves for gate-emitter voltages around the
Gate-emitter threshold voltage, Vge(th).
Modeling Temperature Dependence
For the 2-D lookup table representation, the electrical equations do not depend on
temperature. However, you can model temperature dependence by either using the 3-D
lookup table representation, or by using the equivalent circuit representation of
the detailed model.
For the equivalent circuit representation, temperature dependence is modeled by
the temperature dependence of the constituent components. See the N-Channel MOSFET and PNP Bipolar Transistor block reference pages for further information on
the defining equations.
Some datasheets do not provide information on the zero gate voltage collector
current, Ices, at a higher measurement temperature. In this case,
you can alternatively specify the energy gap, EG, for the device,
using a typical value for the semiconductor type. For silicon, the energy gap is
usually 1.11
eV.
Event-Based IGBT Variant
This implementation has much simpler equations than that with full I-V and
capacitance characteristics. Use the event-based variant when the focus of the
analysis is to understand overall circuit behavior rather than to verify the precise
IGBT timing or losses characteristics.
The device is always in one of the following four states:
Off
Turning on
On
Turning off
In the off state, the relationship between collector current
(ic) and collector-emitter voltage
(vce) is
In the on state, the relationship between collector current
(ic) and collector-emitter voltage
(vce) is
When turning on, the collector-emitter voltage is ramped down to zero over the
rise time, the device moving into the on state when the voltage falls below the
tabulated on-state value. Similarly when turning off, the collector-emitter voltage
is ramped up over the (current) fall time to the specified blocking voltage value.
The following figure shows the resulting voltage and current profiles when driving
a resistive load.
Thermal Port
The block has an optional thermal port, hidden by default. To
expose the thermal port, right-click the block in your model, and
select the appropriate block variant:
For a detailed model, select >
> . This action
displays the thermal port H on the block icon, and exposes the
Thermal Port parameters.
For a simplified event-based model, select
> >. This
action displays the thermal port H on the block icon, exposes
Thermal Port parameters and additional
Main parameters. To simulate thermal effects, you must
provide additional tabulated data for turn-on and turn-off losses and define the
collector-emitter on-state voltage as a function of both current and
temperature.
Use the thermal port to simulate the effects of generated heat and device temperature. For
more information on using thermal ports and on the Thermal Port
parameters, see Simulating Thermal Effects in Semiconductors.
Assumptions and Limitations
The detailed model is based on the following assumptions:
This block does not allow you to specify initial conditions on the junction
capacitances. If you select the Start simulation from steady
state option in the Solver Configuration block,
the block solves the initial voltages to be consistent with the calculated
steady state. Otherwise, voltages are zero at the start of the
simulation.
You may need to use nonzero junction capacitance values to prevent numerical
simulation issues, but the simulation may run faster with these values set to
zero.
The block does not account for temperature-dependent effects on the junction
capacitances.
The simplified, event-based model is based on the following assumptions:
When you use a pair of IGBTs in a bridge arm, normally the gate drive
circuitry will prevent a device turning on until the corresponding device has
turned off, thereby implementing a minimum dead band. If you need to simulate
the case where there is no minimum dead band and both devices are momentarily
partially on, use the detailed IGBT model variant (Full I-V and
capacitance characteristics). The assumption used by the
event-based variant that the collector-emitter voltages can be ramped between on
and off states is not valid for such cases.
A minimum pulse width is applied when turning on or off; at the point where
the gate-collector voltage rises above the threshold, any subsequent gate
voltage changes are ignored for a time equal to the sum of the turn-on delay and
current rise time. Similarly at the point where the gate collector voltage falls
below the threshold, any subsequent gate voltage changes are ignored for a time
equal to the sum of the turn-off delay and current fall time. This feature is
normally implemented in the gate drive circuitry.
This model does not account for charge. Hence there is no current tail when
turning off an inductive load.
Representative modeling of the current spike during turn-on of an inductive
load with preexisting freewheeling current requires tuning of the
Miller resistance parameter.
The tabulated turn-on switching loss uses the previous on-state current, not
the current value (which is not known until the device reaches the final on
state).
Due to high model stiffness that can arise from the simplified equations, you
may get minimum step size violation warnings when using this block. Open the
Solver pane of the Configuration Parameters dialog box and increase the
Number of consecutive min steps parameter value as
necessary to remove these warnings.
Ports
Conserving
expand all
C
— Collector terminal
electrical
Electrical conserving port associated with the PNP emitter
terminal
G
— Gate terminal
electrical
Electrical conserving port associated with the IGBT gate
terminal
E
— Emitter terminal
electrical
Electrical conserving port associated with the PNP collector
terminal
Parameters
expand all
Main (Default Block Variant)
This configuration of the Main tab corresponds to the
detailed block variant, which is the default. If you are using the simplified,
event-based variant of the block, see Main (Event-Based Block Variant).
I-V characteristics defined by
— IGBT representation
Fundamental nonlinear
equations
(default) | Lookup table (2-D, temperature
independent)
| Lookup table (3-D, temperature
dependent)
Select the IGBT representation:
Fundamental nonlinear equations
— Use an equivalent circuit based on a PNP bipolar
transistor and N-channel MOSFET. This is the default.
Lookup table (2-D, temperature
independent)
— Use 2-D table lookup
for collector current as a function of gate-emitter voltage
and collector-emitter voltage.
Lookup table (3-D, temperature
dependent)
— Use 3-D table lookup
for collector current as a function of gate-emitter voltage,
collector-emitter voltage, and temperature.
Zero gate voltage collector current, Ices
— Zero gate voltage collector current
2
mA
(default)
The collector current that flows when the gate-emitter voltage is set
to zero, and a large collector-emitter voltage is applied, that is, the
device is in the off-state. The value of the large collector-emitter
voltage is defined by the parameter Voltage at which Ices is
defined.
Dependencies
This parameter is visible only when you select
Fundamental nonlinear equations
for
the I-V characteristics defined by
parameter.
Voltage at which Ices is defined
— Voltage at which Ices is defined
600
V
(default)
The voltage used when measuring the Zero gate voltage
collector current, Ices.
Dependencies
This parameter is visible only when you select
Fundamental nonlinear equations
for
the I-V characteristics defined by
parameter.
Gate-emitter threshold voltage, Vge(th)
— Gate-emitter threshold voltage
6
V
(default)
The threshold voltage used in the MOSFET equations.
Dependencies
This parameter is visible only when you select
Fundamental nonlinear equations
for
the I-V characteristics defined by
parameter.
Collector-emitter saturation voltage, Vce(sat)
— Collector-emitter saturation voltage
2.6
V
(default)
The collector-emitter voltage for a typical on-state as specified by
the manufacturer.
Dependencies
This parameter is visible only when you select
Fundamental nonlinear equations
for
the I-V characteristics defined by
parameter.
Collector current at which Vce(sat) is defined
— Collector current at which Vce(sat) is defined
400
A
(default)
The collector-emitter current when the gate-emitter voltage is
Vge(sat) and
collector-emitter voltage is
Vce(sat).
Dependencies
This parameter is visible only when you select
Fundamental nonlinear equations
for
the I-V characteristics defined by
parameter.
Gate-emitter voltage at which Vce(sat) is defined
— Gate-emitter voltage at which Vce(sat) is defined
10
V
(default)
The gate voltage used when measuring
Vce(sat) and
Ice(sat).
Dependencies
This parameter is visible only when you select
Fundamental nonlinear equations
for
the I-V characteristics defined by
parameter.
Measurement temperature
— Measurement temperature
25
degC
(default)
The temperature for which the parameters are quoted
(Tm1).
Dependencies
This parameter is visible only when you select
Fundamental nonlinear equations
for
the I-V characteristics defined by
parameter.
Vector of gate-emitter voltages, Vge
— Vector of gate-emitter voltages
[-2 6 7 8 10 12 15 20]
V
(default)
The vector of gate-emitter voltages, to be used for table lookup. The
vector values must be strictly increasing. The values can be
nonuniformly spaced.
Dependencies
This parameter is visible only when you select Lookup
table (2-D, temperature independent)
or
Lookup table (3-D, temperature
dependent)
for the I-V characteristics
defined by parameter.
Vector of collector-emitter voltages, Vce
— Vector of collector-emitter voltages
[-1 0 0.5 1 1.5 2 2.5 3 3.5 4]
V
(default)
The vector of collector-emitter voltages, to be used for table lookup.
The vector values must be strictly increasing. The values can be
nonuniformly spaced.
Dependencies
This parameter is visible only when you select Lookup
table (2-D, temperature independent)
or
Lookup table (3-D, temperature
dependent)
for the I-V characteristics
defined by parameter.
Vector of temperatures, T
— Vector of temperatures
[25 125]
degC
(default)
The vector of temperatures, to be used for table lookup. The vector
values must be strictly increasing. The values can be nonuniformly
spaced.
Dependencies
This parameter is visible only when you select
Lookup table (3-D, temperature
dependent)
for the I-V characteristics
defined by parameter.
Tabulated collector currents, Ic=fcn(Vge,Vce)
— Tabulated collector currents temperature independent
[-1.015e-05, 1.35e-08, .00047135, .0005092,
.0005105, .00051175, .00051299, .00051423, .00051548, .00051672;
-9.9869e-06, 1.35e-08, .00047135, .0005092, .0005105, .00051175,
.00051299, .00051423, .00051548, .00051672; -9.955e-06, 1.35e-08,
.0065225, 3.3324, 48.154, 93.661, 105.52, 105.72, 105.93, 106.14;
-9.955e-06, 1.35e-08, .0065235, 3.5783, 70.264, 166.33, 252.4,
317.67, 353.38, 357.39; -9.955e-06, 1.35e-08, .006524, 3.7206,
89.171, 228.09, 371.63, 511.02, 642.69, 764.04; -9.9549e-06,
1.35e-08, .0065242, 3.7716, 97.793, 256.21, 424.27, 592.92, 759.2,
921.52; -9.9549e-06, 1.35e-08, .0065243, 3.8067, 104.52, 278.11,
464.6, 654.37, 844.57, 1033.9; -9.9549e-06, 1.35e-08, .0065244,
3.8324, 109.92, 295.67, 496.54, 702.28, 909.96, 1118.3]
A
(default)
Tabulated values for collector current as a function of gate-emitter
voltage and collector-emitter voltage, to be used for 2-D table lookup.
Each value in the matrix specifies the collector current for a specific
combination of gate-emitter voltage and collector-emitter voltage. The
matrix size must match the dimensions defined by the gate-emitter
voltage and collector-emitter voltage vectors. The default values, in A,
are:
[-1.015e-5 1.35e-8 4.7135e-4 5.092e-4 5.105e-4 5.1175e-4 5.1299e-4 5.1423e-4 5.1548e-4 5.1672e-4;
-9.9869e-6 1.35e-8 4.7135e-4 5.092e-4 5.105e-4 5.1175e-4 5.1299e-4 5.1423e-4 5.1548e-4 5.1672e-4;
-9.955e-6 1.35e-8 0.0065225 3.3324 48.154 93.661 105.52 105.72 105.93 106.14;
-9.955e-6 1.35e-8 0.0065235 3.5783 70.264 166.33 252.4 317.67 353.38 357.39;
-9.955e-6 1.35e-8 0.006524 3.7206 89.171 228.09 371.63 511.02 642.69 764.04;
-9.9549e-6 1.35e-8 0.0065242 3.7716 97.793 256.21 424.27 592.92 759.2 921.52;
-9.9549e-6 1.35e-8 0.0065243 3.8067 104.52 278.11 464.6 654.37 844.57 1.0339e+3;
-9.9549e-6 1.35e-8 0.0065244 3.8324 109.92 295.67 496.54 702.28 909.96 1.1183e+3]
Dependencies
This parameter is visible only when you select
Lookup table (2-D, temperature
independent)
for the I-V characteristics
defined by parameter.
Tabulated collector currents, Ic=fcn(Vge,Vce,T)
— Tabulated collector currents temperature dependent
zeros(8, 10, 2)
A
(default)
Tabulated values for collector current as a function of gate-emitter
voltage, collector-emitter voltage, and temperature, to be used for 3-D
table lookup. Each value in the matrix specifies the collector current
for a specific combination of gate-emitter voltage and collector-emitter
voltage at a specific temperature. The matrix size must match the
dimensions defined by the gate-emitter voltage, collector-emitter
voltage, and temperature vectors.
Dependencies
This parameter is visible only when you select
Lookup table (3-D, temperature
dependent)
for the I-V characteristics
defined by parameter.
Junction Capacitance (Default Block Variant)
Parameterization
— Junction capacitance parameterization
Specify fixed input, reverse transfer and
output capacitance
(default) | Specify fixed gate-emitter, gate-collector and
collector-emitter capacitance
| Specify tabulated input, reverse transfer and output
capacitance
| Specify tabulated gate-emitter, gate-collector and
collector-emitter capacitance
Select one of the following methods for block parameterization:
Specify fixed input, reverse transfer and
output capacitance
— Provide fixed
parameter values from datasheet and let the block convert
the input, output, and reverse transfer capacitance values
to junction capacitance values, as described in Charge Model. This is
the default method.
Specify fixed gate-emitter, gate-collector
and collector-emitter capacitance
—
Provide fixed values for junction capacitance parameters
directly.
Specify tabulated input, reverse transfer and
output capacitance
— Provide
tabulated capacitance and collector-emitter voltage values
based on datasheet plots. The block converts the input,
output, and reverse transfer capacitance values to junction
capacitance values, as described in Charge Model.
Specify tabulated gate-emitter,
gate-collector and collector-emitter
capacitance
— Provide tabulated
values for junction capacitances and collector-emitter
voltage.
Input capacitance, Cies
— Input capacitance
26.4
nF
(default) | [80 40 32 28 27.5 27 26.5 26.5 26.5]
nF
The gate-emitter capacitance with the collector shorted to the
emitter.
Dependencies
The default value for this parameter depends on the chosen option
for the Parameterization parameter on the
Junction Capacitance tab:
Specify fixed input, reverse transfer and
output capacitance
- If you select
this option, the default value is
26.4
nF
.
Specify tabulated input, reverse transfer
and output capacitance
- If you select
this option, the default value is [80 40 32 28
27.5 27 26.5 26.5 26.5]
nF
.
Reverse transfer capacitance, Cres
— Reverse transfer capacitance
2.7
nF
(default) | [55 9 5.5 3.1 2.5 2.1 1.9 1.8 1.7]
nF
The collector-gate capacitance with the emitter connected to
ground.
Dependencies
The default value for this parameter depends on the chosen option
for the Parameterization parameter on the
Junction Capacitance tab:
Specify fixed input, reverse transfer and
output capacitance
- If you select
this option, the default value is 2.7
nF
.
Specify tabulated input, reverse transfer
and output capacitance
- If you select
this option, the default value is [55 9 5.5 3.1
2.5 2.1 1.9 1.8 1.7]
nF
.
Output capacitance, Coes
— Output capacitance
0
nF
(default) | [60 20 12 8 6 4.8 4 3.5 3.1]
nF
The collector-emitter capacitance with the gate and emitter
shorted.
Dependencies
The default value for this parameter depends on the chosen option
for the Parameterization parameter on the
Junction Capacitance tab:
Specify fixed input, reverse transfer and
output capacitance
- If you select
this option, the default value is 0
nF
.
Specify tabulated input, reverse transfer
and output capacitance
- If you select
this option, the default value is [60 20 12 8 6
4.8 4 3.5 3.1]
nF
.
Gate-emitter junction capacitance
— Gate-emitter junction capacitance
23.7
nF
(default) | [25 31 26.5 24.9 25 24.9 24.6 24.7 24.8]
nF
The value of the capacitance placed between the gate and the
emitter.
Dependencies
The default value for this parameter depends on the chosen option
for the Parameterization parameter on the
Junction Capacitance tab:
Specify fixed gate-emitter,
gate-collector and collector-emitter
capacitance
- If you select this
option, the default value is 23.7
nF
.
Specify tabulated gate-emitter,
gate-collector and collector-emitter
capacitance
- If you select this
option, the default value is [25 31 26.5 24.9
25 24.9 24.6 24.7 24.8]
nF
.
Gate-collector junction capacitance
— Gate-collector junction capacitance
2.7
nF
(default) | [55 9 5.5 3.1 2.5 2.1 1.9 1.8 1.7]
nF
The value of the capacitance placed between the gate and the
collector.
Dependencies
The default value for this parameter depends on the chosen option
for the Parameterization parameter on the
Junction Capacitance tab:
Specify fixed gate-emitter,
gate-collector and collector-emitter
capacitance
- If you select this
option, the default value is 2.7
nF
.
Specify tabulated gate-emitter,
gate-collector and collector-emitter
capacitance
- If you select this
option, the default value is [55 9 5.5 3.1 2.5
2.1 1.9 1.8 1.7]
nF
.
Collector-emitter junction capacitance
— Collector-emitter junction capacitance
0
nF
(default) | [5 11 6.5 4.9 3.5 2.7 2.1 1.7 1.4]
nF
The value of the capacitance placed between the collector and the
emitter.
Dependencies
The default value for this parameter depends on the chosen option
for the Parameterization parameter on the
Junction Capacitance tab:
Specify fixed gate-emitter,
gate-collector and collector-emitter
capacitance
- If you select this
option, the default value is 0
nF
.
Specify tabulated gate-emitter,
gate-collector and collector-emitter
capacitance
- If you select this
option, the default value is [5 11 6.5 4.9 3.5
2.7 2.1 1.7 1.4]
nF
.
Corresponding collector-emitter voltages
— Corresponding collector-emitter voltages
[0 1 2 5 10 15 20 25 30]
V
(default)
The collector-emitter voltages corresponding to the tabulated
capacitance values.
Dependencies
This parameter is visible only when you select
Specify tabulated input, reverse transfer and
output capacitance
or Specify
tabulated gate-emitter, gate-collector and output
capacitance
for the
Parameterization parameter on the
Junction Capacitance tab.
Charge-voltage linearity
— Charge-voltage linearity
Gate-collector capacitance is
constant
(default) | Gate-collector charge function is
nonlinear
Select whether gate-drain capacitance is fixed or nonlinear:
Gate-collector capacitance is
constant
— The capacitance value is
constant and defined according to the selected
parameterization option, either directly or derived from a
datasheet. This is the default method.
Gate-collector charge function is
nonlinear
— The gate-collector
charge relationship is defined according to the
piecewise-nonlinear function described in Charge Model. Two
additional parameters appear to let you define the
gate-collector charge function.
Dependencies
This parameter is visible only when you select
Specify fixed input, reverse transfer and output
capacitance
or Specify fixed
gate-emitter, gate-collector and output
capacitance
for the
Parameterization parameter on the
Junction Capacitance tab.
Gate-collector oxide capacitance
— Gate-collector oxide capacitance
20
nF
(default)
The gate-collector capacitance when the device is on and the
collector-gate voltage is small. This parameter is visible only when you
select Gate-collector charge function is
nonlinear
for the Charge-voltage
linearity parameter. The default value is
20
nF.
Dependencies
This parameter is visible only when you select
Gate-collector charge function is
nonlinear
for the Charge-voltage
linearity parameter.
Collector-gate voltage below which oxide capacitance becomes active
— Collector-gate voltage below which oxide capacitance becomes active
-5
V
(default)
The collector-gate voltage at which the collector-gate capacitance
switches between off-state
(CGC) and on-state
(Cox) capacitance
values.
Dependencies
This parameter is visible only when you select
Gate-collector charge function is
nonlinear
for the Charge-voltage
linearity parameter.
Total forward transit time
— Total forward transit time
0
us
(default)
The forward transit time for the PNP transistor used as part of the
underlying IGBT model. It affects how quickly charge is removed from the
channel when the IGBT is turned off.
Advanced (Default Block Variant)
The lookup table representation combines all the equivalent circuit components
into one lookup table, and therefore this tab is empty. If you use the equivalent
circuit representation, this tab has the following parameters.
Emission coefficient, N
— Emission coefficient
1
(default)
The emission coefficient or ideality factor of the bipolar
transistor.
Forward Early voltage, VAF
— Forward Early voltage
200
V
(default)
The forward Early voltage for the PNP transistor used in the IGBT
model. See the PNP Bipolar Transistor block
reference page for more information.
Collector resistance, RC
— Collector resistance
0.001
Ohm
(default)
Resistance at the collector.
Emitter resistance, RE
— Emitter resistance
0.001
Ohm
(default)
Resistance at the emitter.
Internal gate resistance, RG
— Internal gate resistance
0.001
Ohm
(default)
The value of the internal gate resistor at the measurement
temperature. Note that this is not the value of the external circuit
series gate resistance, which you should model externally to the
IGBT.
Forward current transfer ratio, BF
— Forward current transfer ratio
50
(default)
Ideal maximum forward current gain for the PNP transistor used in the
IGBT model. See the PNP Bipolar
Transistor block reference page for more
information.
Temperature Dependence (Default Block Variant)
For the 2-D lookup table representation, the electrical equations do not depend on
temperature and therefore this tab is empty. For the 3-D lookup table representation
with exposed thermal port, this tab is also empty because the 3-D matrix on the
Main tab captures the temperature dependence.
If the block thermal port is not exposed for the 3-D lookup table representation,
then this tab contains only the Device simulation
temperature parameter. If you use the equivalent circuit
representation, this tab has the following parameters.
Parameterization
— Temperature dependence parameterization
None — Simulate at parameter
measurement temperature
(default) | Specify Ices and Vce(sat) at second measurement
temperature
| Specify Vce(sat) at second measurement temperature plus
the energy gap, EG
Select one of the following methods for temperature dependence parameterization:
None — Simulate at parameter
measurement temperature
—
Temperature dependence is not modeled, and none of the other
parameters on this tab are visible. This is the default
method.
Specify Ices and Vce(sat) at second
measurement temperature
— Model
temperature-dependent effects by providing values for the
zero gate voltage collector current,
Ices, and collector-emitter voltage,
Vce(sat), at
the second measurement temperature.
Specify Vce(sat) at second measurement
temperature plus the energy gap, EG
— Use this option when the datasheet does not provide
information on the zero gate voltage collector current,
Ices, at a higher measurement
temperature.
Energy gap, EG
— Energy gap
1.11
eV
(default)
Energy gap value. The default value is 1.11
eV.
Dependencies
This parameter is visible only when you select
Specify Vce(sat) at second measurement temperature
plus the energy gap, EG
for the
Parameterization parameter on the
Temperature Dependence tab.
Zero gate voltage collector current, Ices, at second measurement temperature
— Zero gate voltage collector current, Ices, at second measurement
temperature
100
mA
(default)
The zero gate collector current value at the second measurement
temperature.
Dependencies
This parameter is visible only when you select
Specify Ices and Vce(sat) at second measurement
temperature
for the
Parameterization parameter on the
Temperature Dependence tab.
Collector-emitter saturation voltage, Vce(sat), at second measurement temperature
— Collector-emitter saturation voltage, Vce(sat), at second measurement
temperature
3
V
(default)
The collector-emitter saturation voltage value at the second
measurement temperature, and when the collector current and gate-emitter
voltage are as defined by the corresponding parameters on the
Main tab.
Second measurement temperature
— Second measurement temperature
125
degC
(default)
Second temperature Tm2 at
which Zero gate voltage collector current, Ices, at second
measurement temperature and Collector-emitter
saturation voltage, Vce(sat), at second measurement
temperature are measured.
Saturation current temperature exponent, XTI
— Saturation current temperature exponent
3
(default)
The saturation current exponent value for your device type. If you
have graphical data for the value of Ices as a
function of temperature, you can use it to fine-tune the value of
XTI.
Mobility temperature exponent, BEX
— Mobility temperature exponent
-1.5
(default)
Mobility temperature coefficient value. You can use the default value
for most devices. If you have graphical data for
Vce(sat) at different
temperatures, you can use it to fine-tune the value of
BEX.
Internal gate resistance temperature coefficient
— Internal gate resistance temperature coefficient
0
1/K
(default)
Represents the fractional rate of change (α) of
internal gate resistance (RG) with temperature. Thus the gate resistance
is R =
Rmeas(1 +
α
(Ts –
Tm1 )), where Rmeas
is the Internal gate resistance, RG parameter
value.
Device simulation temperature
— Device simulation temperature
25
degC
(default)
Temperature Ts at which the
device is simulated.
Main (Event-Based Block Variant)
This configuration of the Main tab corresponds to
the simplified, event-based block variant. If you are using the detailed variant of
the block, see Main (Default Block Variant).
Vector of temperatures, Tj
— Vector of temperatures
[298.15, 398.15]
K
(default)
Temperature values at which the collector-emitter and turn-on/turn-off
losses are quoted.
Dependencies
This parameter is visible only if your block has an exposed
thermal port.
Vector of collector currents, Ic
— Vector of collector currents
[0, 10, 50, 100, 200, 400, 600]
A
(default)
Collector currents for which the on-state collector-emitter voltages
are defined. The first element must be zero.
Corresponding on-state collector-emitter voltages
— Corresponding on-state collector-emitter voltages
[0, 1.1, 1.3, 1.45, 1.75, 2.25,
2.7]
V
(default)
Collector-emitter voltages corresponding to the vector of collector
currents. The first element must be zero. If your block has an exposed
thermal port, this parameter is replaced with the
Collector-emitter on-state voltages,
Vce=fcn(Tj,Ic) parameter, which defines the voltages in
terms of both temperature and current.
Collector-emitter on-state voltages, Vce=fcn(Tj,Ic)
— Collector-emitter on-state voltages
[0, 1.1, 1.3, 1.45, 1.75, 2.25, 2.7; 0, 1.0,
1.15, 1.35, 1.7, 2.35, 3.0]
V
(default)
Collector-emitter voltages when in the on state, defined as a function
of both temperature and current.
Dependencies
This parameter is visible only if your block has an exposed
thermal port.
Turn-on switching losses, Eon=fcn(Tj,Ic)
— Turn-on switching losses
[0, 0.2, 1, 2, 4, 8, 15; 0, 0.3, 1.3, 2.5, 5,
11, 18]*1e-3
J
(default)
Energy loss when turning the device on, defined as a function of
temperature and final on-state current.
Dependencies
This parameter is visible only if your block has an exposed
thermal port.
Turn-off switching losses, Eoff=fcn(Tj,Ic)
— Turn-off switching losses
[0, 0.3, 1.5, 3, 6, 15, 25; 0, 0.7, 3.3, 6.5,
13, 25, 35]*1e-3
J
(default)
Energy loss when turning the device off, defined as a function of
temperature and final on-state current.
Dependencies
This parameter is visible only if your block has an exposed
thermal port.
Miller resistance
— Miller resistance
0.1
Ohm
(default)
When the device turns on, it has a constant-value Miller resistance in
series with the demanded voltage ramp. This resistance represents the
partial conductance path through the device during turn on, and can be
used to match the voltage spike observed when reconnecting a
current-carrying inductor and corresponding freewheeling diode. A
typical value is 10 to 50 times the effective on-state
resistance.
Off-state conductance
— Off-state conductance
1e-5
Ohm
(default)
Conductance when the device is in the off state.
Threshold voltage, Vth
— Threshold voltage
6
V
(default)
The gate-emitter voltage must be greater than this value for the
device to turn on.
Dynamics (Event-Based Block Variant)
Turn-on delay
— Turn-on delay
0.07
us
(default)
Time before which the device starts to ramp on.
Current rise time
— Current rise time
0.7
us
(default)
Time taken for the current to ramp up when driving a resistive
load.
Turn-off delay
— Turn-off delay
0.2
us
(default)
Time before which the device starts to ramp off.
Current fall time
— Current fall time
0.5
us
(default)
Time taken for the current to ramp down when driving a resistive
load.
Off-state voltage for rise and fall times
— Off-state voltage for rise and fall times
300
V
(default)
Off-state collector-emitter voltage used when specifying the rise and
fall times. The default value is 300
V. If your block
has an exposed thermal port, this parameter is replaced with the
Off-state voltage for timing and losses data
parameter, which defines the voltage used when specifying the rise and
fall times and also the losses data, also with the default value of
300
V.
Extended Capabilities
C/C++ Code Generation
Generate C and C++ code using Simulink® Coder™.
See Also
Introduced in R2008a